抄録
We have studied a quarter-micrometre-gate HEMT by a two-dimensional Monte Carlo particle simulation to gain a deeper insight into the device operation. A new transversedomain formation due to intervalley electron transfer is predicted. The effect of domain formation on device performance and current saturation characteristics is also discussed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1315-1317 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 24 |
| 号 | 21 |
| DOI | |
| 出版ステータス | Published - 1988 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学