Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

K. Iwata, P. Fons, A. Yamada, K. Matsubara, S. Niki

研究成果: Conference article査読

175 被引用数 (Scopus)

抄録

Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.

本文言語English
ページ(範囲)526-531
ページ数6
ジャーナルJournal of Crystal Growth
209
2-3
DOI
出版ステータスPublished - 2000 2
外部発表はい
イベントThe 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn
継続期間: 1999 7 281999 7 30

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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