@article{3cd2621c00e448918c6d9c6f89b0c958,
title = "Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond",
abstract = "We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.",
author = "Kazuki Ito and Hiroshi Saito and Kento Sasaki and Hideyuki Watanabe and Tokuyuki Teraji and Itoh, {Kohei M.} and Eisuke Abe",
note = "Funding Information: We thank H. Sumiya for supplying the diamond substrate. H.W. acknowledges support from JSPS Grant-in-Aid for Scientific Research (KAKENHI) (A) No. 26249108 and JST Development of Systems and Technologies for Advanced Measurement and Analysis (SENTAN). T.T. acknowledges support from KAKENHI (B) No. 15H03980. K.M.I. acknowledges support from KAKENHI (S) No. 26220602, JSPS Core-to-Core Program, and Spintronics Research Network of Japan (Spin-RNJ). Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = may,
day = "22",
doi = "10.1063/1.4984060",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",
}