Non-catalytic growth of graphene-like thin film near pattern edges fabricated on SiO2 substrates

Satoru Suzuki; Yoshihiro Kobayashi; Tomoyuki Mizuno; Hideyuki Maki

doi:10.1016/j.tsf.2010.02.027

Non-catalytic growth of graphene-like thin film near pattern edges fabricated on SiO₂ substrates

Satoru Suzuki, Yoshihiro Kobayashi, Tomoyuki Mizuno, Hideyuki Maki

物理情報工学科

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

Graphene-like thin films were grown on patterned SiO₂ substrates by simple thermal chemical vapor deposition using ethanol. The film growth occurred preferentially in the vicinity of pattern edges. Catalytic metal is not necessary for the substrate or the pattern. The films consist of graphitic nanocrystals of several nanometer scale. In the electric properties, the field effect is observed at room temperature.

本文言語	English
ページ（範囲）	5040-5043
ページ数	4
ジャーナル	Thin Solid Films
巻	518
号	18
DOI	https://doi.org/10.1016/j.tsf.2010.02.027
出版ステータス	Published - 2010 7月 1

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

文献へのアクセス

10.1016/j.tsf.2010.02.027

他のファイルとリンク

引用スタイル

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KW - Scanning electron microscopy

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