Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

研究成果: Article

61 引用 (Scopus)

抜粋

Laser micro-Raman spectroscopy was used to examine silicon wafers precision machined by diamond tools, and the results were compared with transmission electronic microscopic results. It was found that near-surface amorphous layers were generated by machining and there was a strong correlation between the thickness of the amorphous layer and the Raman intensity ratio of the amorphous phase to the crystalline phase. This finding provides the feasibility of a fast, inexpensive, nondestructive and quantitative measurement approach for subsurface damages of semiconductor materials by using laser micro-Raman spectroscopy. The effective measurement range was experimentally investigated and the sensing limits were theoretically discussed from the aspect of light scattering and light absorption with a double-layer material model.

元の言語English
ページ(範囲)186-195
ページ数10
ジャーナルPrecision Engineering
32
発行部数3
DOI
出版物ステータスPublished - 2008 7 1
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)

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