Nonequilibrium plasmas for material processing in microelectronics

Z. Lj Petrovic, T. Makabe

研究成果: Chapter

7 被引用数 (Scopus)

抄録

In this paper we give a brief review of applications of non equilibrium plasmas in material processing with a particular emphasis on applications for ultra large scale integrated (ULSI) circuit production. In particular we shall discuss the maintaining mechanisms in the two most generally applied techniques capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP). For CCP those mechanisms have been established only recently, while for the ICP, the whole range of plasma sustaining mechanisms has not been established yet. As an illustration of a good agreement between theoretical models and experimental data we discuss plasma etching in narrow-gap reactive ion etcher (RIE) filled with SF6.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
編集者Dragan P. Uskoković, Slobodan K. Milonjić, Dejan I. Rakovic
出版社Trans Tech Publications Ltd
ページ47-56
ページ数10
ISBN(印刷版)9780878498123
DOI
出版ステータスPublished - 1998

出版物シリーズ

名前Materials Science Forum
282-283
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Nonequilibrium plasmas for material processing in microelectronics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル