Novel modification method of sol-gel thin films - Densification of silica gel films with electronic excitation

Hiroaki Imai, Hiroshi Hirashima, Koichi Awazu, Hideo Onuki

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Significant structural changes in silica gel films with synchrotron radiation (SR) and energetic He+ ions have been found. Irradiation with photons in the energy range higher than approximately 8 eV and 100-keV He+ ions induce an increase in refractive index and a decrease in thickness of silica gel films. Fourier transform infrared absorption spectra indicate that irradiation with the photons and the ions reduces the Si-OH content and the average Si-O-Si bridging angle. Electronic excitation with energetic photons is suggested to induce atomic rearrangement which causes densification of silica gel. Structural changes with He+ implantation is also tentatively ascribed to an electronic process. Electronic processes using SR and light ion implantation are anticipated to offer an alternative route to prepare dense thin films derived from sol-gel method.

本文言語English
ページ(範囲)1094-1096
ページ数3
ジャーナルNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
102
DOI
出版ステータスPublished - 1994

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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