Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe, Ken Uchida, Atsuhiro Kinoshita

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

本文言語English
ページ(範囲)52-58
ページ数7
ジャーナルIEEE Transactions on Electron Devices
54
1
DOI
出版ステータスPublished - 2007 1月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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