Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy

Mitsuo Takahashi, Akihiro Moto, So Tanaka, Tatsuya Tanabe, Shigenori Takagishi, Kouichi Karatani, Masaaki Nakayama, Kazunari Matsuda, Toshiharu Saiki

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Photoluminescence (PL) spectra and scanning near-field optical microscope (SNOM) images have been measured at low temperature to investigate the compositional fluctuations in GaNxAs1-x epilayers grown on GaAs by metalorganic vapor-phase epitaxy. Time-resolved PL has been employed to study the optical transitions and their dynamic processes. Our results suggest that the PL emission from GaNxAs1-x epilayer at low temperature is dominated by localized exciton recombination induced by compositional fluctuations. Furthermore, we directly observed the distribution of the compositional inhomogeneity in the GaNxAs1-x samples even with a small N-content of 0.5% by measuring SNOM images. The emission spot size of less than 1 μm is estimated for the GaNxAs1-x (N = 0.5%) epilayer, and its size tends to decrease with increasing nitrogen concentration.

本文言語English
ページ(範囲)461-466
ページ数6
ジャーナルJournal of Crystal Growth
221
1-4
DOI
出版ステータスPublished - 2000 12
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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