Observation of exciton-polariton emissions from a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy

Shigefusa F. Chichibu, Takayuki Sota, Paul J. Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki

研究成果: Article査読

22 被引用数 (Scopus)

抄録

Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.

本文言語English
ページ(範囲)L935-L937
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
8 B
DOI
出版ステータスPublished - 2002 8 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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