Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

Ralf Hunger, Paul Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

研究成果: Article査読

5 被引用数 (Scopus)

抄録

ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

本文言語English
ページ(範囲)H8211-H8216
ジャーナルMaterials Research Society Symposium - Proceedings
668
DOI
出版ステータスPublished - 2001
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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