@article{91c63351b4344183a939477d7942a2b4,
title = "Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS",
abstract = "An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.",
keywords = "Diffusion, HRBS, Si emission, Si isotope, SiO, Thermal oxidation",
author = "S. Hosoi and K. Nakajima and M. Suzuki and K. Kimura and Y. Shimizu and S. Fukatsu and Itoh, {K. M.} and M. Uematsu and H. Kageshima and K. Shiraishi",
note = "Funding Information: This work was supported in part by “Nanotechnology Support Project” and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science and Technology. This work was also supported by the Center of Excellence for Research and Education on Complex Functional Mechanical Systems (COE program) of the Ministry of Education, Culture, Sports, Science and Technology.",
year = "2006",
month = aug,
doi = "10.1016/j.nimb.2006.04.036",
language = "English",
volume = "249",
pages = "390--393",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2 SPEC. ISS.",
}