Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, N. Yokoyama

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

本文言語English
ページ(範囲)1655-1657
ページ数3
ジャーナルElectronics Letters
33
19
DOI
出版ステータスPublished - 1997 9 11
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

フィンガープリント 「Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル