Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama; Y. Nakata; S. Muto; N. Horiguchi; T. Futatsugi; Y. Awano; N. Yokoyama

doi:10.1049/el:19971096

Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, N. Yokoyama

研究成果: Article › 査読

13 被引用数 (Scopus)

抄録

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

本文言語	English
ページ（範囲）	1655-1657
ページ数	3
ジャーナル	Electronics Letters
巻	33
号	19
DOI	https://doi.org/10.1049/el:19971096
出版ステータス	Published - 1997 9月 11
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19971096

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abstract = "The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.",

keywords = "Photoconductivity, Semiconductor quantum dots",

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AU - Muto, S.

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AU - Futatsugi, T.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 1997/9/11

Y1 - 1997/9/11

N2 - The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

AB - The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

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KW - Semiconductor quantum dots

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Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

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