Occupied and Unoccupied Levels of Half-Fluorinated and Perfluorinated Rubrene Thin Films Probed by One- And Two-Photon Photoemission

Tomoya Inoue, Masahiro Shibuta, Toshiyasu Suzuki, Atsushi Nakajima

研究成果: Article査読

抄録

We measured occupied and unoccupied energy levels of half-fluorinated and perfluorinated rubrenes (C42F14H14, F14-RUB, and C42F28, PF-RUB) thin films prepared on a highly oriented pyrolytic graphite substrate by a combination of one- and two-photon photoemission spectroscopies. It is revealed that the energy levels near the Fermi level (EF) decrease when the fluorination degree increases, where the energies of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are located at EF - 1.83 eV and EF + 0.9 eV for F14-RUB and EF - 2.51 eV and EF + 0.6 eV for PF-RUB, respectively. The HOMO-LUMO gaps corresponding to the energy for the creation of free photocarriers in molecular films - known as "transport gaps"- are evaluated by 2.7 eV for F14-RUB and 3.1 eV for PF-RUB.

本文言語English
ページ(範囲)12409-12416
ページ数8
ジャーナルJournal of Physical Chemistry C
124
23
DOI
出版ステータスPublished - 2020 6月 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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