The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).
|ジャーナル||Journal of Applied Physics|
|出版ステータス||Published - 1989|
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