On the origin of tunneling barriers in silicon single electron and single hole transistors

Hiroki Ishikuro, Toshiro Hiramoto

研究成果: Article査読

69 被引用数 (Scopus)

抄録

To clarify the channel potential profiles, Coulomb blockades of single electron and single hole tunneling in Si nanosize narrow channel metal-oxide-semiconductor field-effect transistors are intensively studied. Devices with both n+ and p+ source/drain contacts were fabricated on silicon-on-insulator substrates. Transport properties of a hole system as well as an electron system induced in the same channel were investigated. It is found from the experimental results that potential fluctuations in the channel act as tunnel barriers for both electrons and holes. Lateral quantum confinement effects or silicon oxide (SiOx) are thought to be the cause of tunnel barriers.

本文言語English
ページ(範囲)1126-1128
ページ数3
ジャーナルApplied Physics Letters
74
8
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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