Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates

Toshimichi Yamada, Kohei M. Itoh

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Hall measurements and photoluminescence of nitrogen doped free standing SC-SiC films grown directly on undulant 6-inch Si substrates by a CVD method are reported. A clear difference in the electron mobility was observed before and after removal of the highly defected region near the Si/3C-SiC interface. Low-temperature photoluminescence spectra showed sharp features of the nitrogen bound exciton. Luminescence due to free exciton recombination, which is a good measure of the crystalline quality of samples, has been observed in as-grown 3C-SiC films formed directly on Si.

本文言語English
ページ(範囲)675-678
ページ数4
ジャーナルMaterials Science Forum
389-393
1
DOI
出版ステータスPublished - 2002

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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