Optical characterization of 100eV C+ ion doped GaAs

Tsutomu Iida, Yunosuke Makita, Shinji Kimura, Stefan Winter, Akimasa Yamada, Hajime Shibata, Akira Obara, Shigeru Niki, Paul Fons, Yushin Tsai, Shin ichiro Uekusa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature (Tg) between 500°C and 590°C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, `g' and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg = 500°C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

本文言語English
ホスト出版物のタイトルIII-V Electronic and Photonic Device Fabrication and Performance
出版社Publ by Materials Research Society
ページ357-362
ページ数6
ISBN(印刷版)1558991964, 9781558991965
DOI
出版ステータスPublished - 1993 1 1
外部発表はい
イベントMaterials Research Society Spring Meeting - San Francisco, CA, USA
継続期間: 1993 4 121993 4 15

出版物シリーズ

名前Materials Research Society Symposium Proceedings
300
ISSN(印刷版)0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period93/4/1293/4/15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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