Optical characterization of CulnSe2 grown by molecular beam epitaxy

S. Niki, Y. Makita, A. Yamada, H. Shibata, P. J. Fons, A. Obara, T. Kurafuji, S. Chichibu, H. Nakanishi

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

CulnSe2 epitaxial films with near stoichiometric compositions have been grown on GaAs (001) by molecular beam epitaxy, and radiative recombination processes in these films have been characterized by means of low temperature photoluminescence (PL) spectroscopy. Temperature dependent PL measurements on such epitaxial films have made possible the identification of conduction band to acceptor and donor-acceptor pair transitions. Well-defined emission lines were present near the bandgap, and the emissions at 1.0386eV and at 1.0311eV were found to be due to the ground-state free exciton and the excitons bound to neutral acceptors, respectively. The bandgap of CulnSe2 is also determined to be Eg=1.0462eV at 2K.

本文言語English
ページ(範囲)132-135
ページ数4
ジャーナルConference Record of the IEEE Photovoltaic Specialists Conference
1
出版ステータスPublished - 1994 12 1
外部発表はい
イベントProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
継続期間: 1994 12 51994 12 9

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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