Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy

Kenji Yoshino, Hirosumi Yokoyama, Kouji Maeda, Tetsuo Ikari, Atsuhiko Fukuyama, Paul J. Fons, Akimasa Yamada, Shigeru Niki

研究成果: Article査読

28 被引用数 (Scopus)

抄録

CuInSe2 (CIS) films with Cu/In ratios of γ=0.82-1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films.

本文言語English
ページ(範囲)4354-4359
ページ数6
ジャーナルJournal of Applied Physics
86
8
DOI
出版ステータスPublished - 1999 10 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Optical characterizations of CuInSe<sub>2</sub> epitaxial layers grown by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル