Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

C. C. Du, T. C. Wei, C. H. Chang, S. L. Lee, M. W. Liang, J. R. Huang, C. H. Wu, A. Shirakura, R. Morisawa, T. Suzuki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

本文言語English
ページ(範囲)3999-4002
ページ数4
ジャーナルThin Solid Films
520
11
DOI
出版ステータスPublished - 2012 3 30

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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