By combining time-resolved pump-probe reflectivity measurements with scanning laser microscopy, we demonstrate microscopic two-dimensional (2D) imaging of defect density distribution on a GaAs surface. The carrier lifetime is significantly reduced by the recombination process through defect states introduced by 5-keV He+ ion implantation. Thus, when plotting the probe beam reflectivity at 1 ps after photoexcitation and scanning the probe beam across the GaAs surface at a spatial resolution of 2 μm with a scanning step of 10 μm, we obtain a clear image of defect distribution corresponding to a mask edge pattern placed on the sample during ion implantation. Clearer images can be obtained using longer wavelength probe light.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 1月|
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