Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima, Y. Sakuma, Y. Sugiyama, Y. Awano, N. Yokoyama

研究成果: Paper査読

抄録

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

本文言語English
ページ315-319
ページ数5
出版ステータスPublished - 2000 12月 1
外部発表はい
イベント27th International Symposium on Compound Semiconductors - Monterey, CA, United States
継続期間: 2000 10月 22000 10月 5

Other

Other27th International Symposium on Compound Semiconductors
国/地域United States
CityMonterey, CA
Period00/10/200/10/5

ASJC Scopus subject areas

  • 工学(全般)

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