Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima; Y. Sakuma; Y. Sugiyama; Y. Awano; N. Yokoyama

Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima, Y. Sakuma, Y. Sugiyama, Y. Awano, N. Yokoyama

研究成果: Paper › 査読

抄録

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

本文言語	English
ページ	315-319
ページ数	5
出版ステータス	Published - 2000 12 1
外部発表	はい
イベント	27th International Symposium on Compound Semiconductors - Monterey, CA, United States 継続期間: 2000 10 2 → 2000 10 5

Other

Other	27th International Symposium on Compound Semiconductors
Country	United States
City	Monterey, CA
Period	00/10/2 → 00/10/5

ASJC Scopus subject areas

Engineering(all)

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引用スタイル

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abstract = "Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.",

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AU - Shima, M.

AU - Sakuma, Y.

AU - Sugiyama, Y.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 2000/12/1

Y1 - 2000/12/1

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AB - Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

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T2 - 27th International Symposium on Compound Semiconductors

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