抄録
Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
本文言語 | English |
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ページ | 315-319 |
ページ数 | 5 |
出版ステータス | Published - 2000 12月 1 |
外部発表 | はい |
イベント | 27th International Symposium on Compound Semiconductors - Monterey, CA, United States 継続期間: 2000 10月 2 → 2000 10月 5 |
Other
Other | 27th International Symposium on Compound Semiconductors |
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国/地域 | United States |
City | Monterey, CA |
Period | 00/10/2 → 00/10/5 |
ASJC Scopus subject areas
- 工学(全般)