Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima; Y. Sakuma; Y. Sugiyama; Y. Awano; N. Yokoyama

Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima, Y. Sakuma, Y. Sugiyama, Y. Awano, N. Yokoyama

研究成果: Paper › 査読

抄録

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

本文言語	English
ページ	315-319
ページ数	5
出版ステータス	Published - 2000 12月 1
外部発表	はい
イベント	27th International Symposium on Compound Semiconductors - Monterey, CA, United States 継続期間: 2000 10月 2 → 2000 10月 5

Other

Other	27th International Symposium on Compound Semiconductors
国/地域	United States
City	Monterey, CA
Period	00/10/2 → 00/10/5

ASJC Scopus subject areas

工学（全般）

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引用スタイル

@conference{fffaff20bbfe493694d1648181c6d8a9,

title = "Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell",

abstract = "Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.",

author = "M. Shima and Y. Sakuma and Y. Sugiyama and Y. Awano and N. Yokoyama",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "315--319",

note = "27th International Symposium on Compound Semiconductors ; Conference date: 02-10-2000 Through 05-10-2000",

}

TY - CONF

T1 - Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

AU - Shima, M.

AU - Sakuma, Y.

AU - Sugiyama, Y.

AU - Awano, Y.

AU - Yokoyama, N.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

AB - Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

UR - http://www.scopus.com/inward/record.url?scp=0034424743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034424743&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034424743

SP - 315

EP - 319

T2 - 27th International Symposium on Compound Semiconductors

Y2 - 2 October 2000 through 5 October 2000

ER -

Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

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