Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
|出版ステータス||Published - 2000 12 1|
|イベント||27th International Symposium on Compound Semiconductors - Monterey, CA, United States|
継続期間: 2000 10 2 → 2000 10 5
|Other||27th International Symposium on Compound Semiconductors|
|Period||00/10/2 → 00/10/5|
ASJC Scopus subject areas