抄録
Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | IEEE International Symposium on Compound Semiconductors, Proceedings |
| ページ | 315-319 |
| ページ数 | 5 |
| 出版物ステータス | Published - 2000 |
| 外部発表 | Yes |
| イベント | 27th International Symposium on Compound Semiconductors - Monterey, CA, United States 継続期間: 2000 10 2 → 2000 10 5 |
Other
| Other | 27th International Symposium on Compound Semiconductors |
|---|---|
| 国 | United States |
| 市 | Monterey, CA |
| 期間 | 00/10/2 → 00/10/5 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
これを引用
Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. / Shima, M.; Sakuma, Y.; Sugiyama, Y.; Awano, Yuji; Yokoyama, N.
IEEE International Symposium on Compound Semiconductors, Proceedings. 2000. p. 315-319.研究成果: Conference contribution
}
TY - GEN
T1 - Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell
AU - Shima, M.
AU - Sakuma, Y.
AU - Sugiyama, Y.
AU - Awano, Yuji
AU - Yokoyama, N.
PY - 2000
Y1 - 2000
N2 - Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
AB - Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
UR - http://www.scopus.com/inward/record.url?scp=0034424743&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034424743&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0034424743
SP - 315
EP - 319
BT - IEEE International Symposium on Compound Semiconductors, Proceedings
ER -