Three-dimensional photonic crystals' optical properties based on III-V semiconductors are investigated. A wafer-fusion technique is utilized to stack the III-V semiconductor stripes to form an asymmetric face-centered-cubic (a-fcc) structure. Results showed that a crystal with eight-stacked layers has a considerable band-gap effect in the transmission spectrum at infrared wavelengths and the band-gap is observed independently of the incident angles. Then, a crystal in the near-infrared wavelengths is constructed with the four-stacked stripe structure and attenuation up to 10 dB is demonstrated.
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