Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon

T. Ishikawa, K. Koga, T. Itahashi, K. M. Itoh, L. S. Vlasenko

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Observation of photoluminescence from spin triplet states of excitons bound to interstitial carbon-oxygen complexes (Ci-Oi) in silicon is reported. New luminescence peak labeled as CT line emerges at the energy 2.64meV below the well-known luminescence from the no-phonon transition of a Ci-Oi singlet state situating at 790meV (C line). Observations of local vibrational modes associated with CT line and the temperature dependence of the relative intensity between C T and C lines lead to unambiguous identification of CT line as the no-phonon line from Ci-Oi defects. In addition, the host silicon isotope shift of CT line is equal to that of C line, indicating that CT line is no-phonon luminescence as well. Furthermore, our photoluminescence measurements carried out in magnetic field show that CT line is associated with an isotropic spin triplet state due to quenching of orbital angular momentum of the hole composing the bound exciton.

本文言語English
論文番号115204
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
84
11
DOI
出版ステータスPublished - 2011 9月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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