Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy

K. Romanyuk, J. Mysliveček, V. Cherepanov, T. Sekiguchi, S. Yoshida, K. M. Itoh, B. Voigtländer

研究成果: Article査読

23 被引用数 (Scopus)

抄録

We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.

本文言語English
論文番号241309
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
75
24
DOI
出版ステータスPublished - 2007 6 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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