Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy

K. Romanyuk, J. Mysliveček, V. Cherepanov, T. Sekiguchi, S. Yoshida, Kohei M Itoh, B. Voigtländer

研究成果: Article

23 引用 (Scopus)

抄録

We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.

元の言語English
記事番号241309
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
75
発行部数24
DOI
出版物ステータスPublished - 2007 6 29

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Epitaxial growth
Surface-Active Agents
epitaxy
Nanowires
Surface active agents
nanowires
surfactants
Crystalline materials

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy. / Romanyuk, K.; Mysliveček, J.; Cherepanov, V.; Sekiguchi, T.; Yoshida, S.; Itoh, Kohei M; Voigtländer, B.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 75, 番号 24, 241309, 29.06.2007.

研究成果: Article

Romanyuk, K, Mysliveček, J, Cherepanov, V, Sekiguchi, T, Yoshida, S, Itoh, KM & Voigtländer, B 2007, 'Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy', Physical Review B - Condensed Matter and Materials Physics, 巻. 75, 番号 24, 241309. https://doi.org/10.1103/PhysRevB.75.241309
Romanyuk, K. ; Mysliveček, J. ; Cherepanov, V. ; Sekiguchi, T. ; Yoshida, S. ; Itoh, Kohei M ; Voigtländer, B. / Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy. :: Physical Review B - Condensed Matter and Materials Physics. 2007 ; 巻 75, 番号 24.
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