Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts

Takeshi Hirai, Kazuhiko Maeda, Masaaki Yoshida, Jun Kubota, Shigeru Ikeda, Michio Matsumura, Kazunari Domen

研究成果: Article査読

79 被引用数 (Scopus)

抄録

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

本文言語English
ページ(範囲)18853-18855
ページ数3
ジャーナルJournal of Physical Chemistry C
111
51
DOI
出版ステータスPublished - 2007 12 27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

フィンガープリント

「Origin of visible light absorption in GaN-rich (Ga<sub>1-x</sub>Zn <sub>x</sub>)(N<sub>1-x</sub>O<sub>x</sub>) photocatalysts」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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