p-Type conductivity of GeTe: The role of lone-pair electrons

Alexander V. Kolobov, Paul Fons, Junji Tominaga

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Chalcogenide alloys are usually p-type semiconductors. In GeTe, it was recently argued that p-type conductivity results from vacancies on Ge sites. In this work, we demonstrate that the creation of vacancies in GeTe, in which the co-existence of conventional covalent and dative bonds utilising the Te lone-pair (LP) electrons makes Ge(3):Te(3) bonding geometry possible, results in the formation of a triad of twofold coordinated Te atoms. Because of the different nature of bonding (conventional covalent vs. dative), only one of the three Te atoms naturally possesses LP electrons after rupture of the Ge-Te bonds. As a result of electron redistribution, three twofold coordinated Te atoms with LP electrons and concomitantly holes in the valence band are generated, which provides a natural explanation of p-type conductivity. We argue that a similar mechanism may be also operative in S- and Se-based alloys, providing a general explanation of p-type conductivity in chalcogenides.

本文言語English
ページ(範囲)1902-1906
ページ数5
ジャーナルPhysica Status Solidi (B) Basic Research
249
10
DOI
出版ステータスPublished - 2012 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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