Patterned carbon nanotube films formed by surface decomposition of SiC wafers

Michiko Kusunoki, Toshiyuki Suzuki, Chizuru Honjo, Craig Fisher, Tsukasa Hirayama, Mizuhisa Nihei, Yuji Awano

    研究成果: Letter査読

    10 被引用数 (Scopus)

    抄録

    Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.

    本文言語English
    ページ(範囲)L1486-L1488
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    42
    12 A
    DOI
    出版ステータスPublished - 2003 12 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(その他)
    • 物理学および天文学(全般)

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