Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano, Makoto Kosugi, Takashi Mimura, Masayuki Abe

研究成果: Article査読

36 被引用数 (Scopus)

抄録

The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

本文言語English
ページ(範囲)451-453
ページ数3
ジャーナルIEEE Electron Device Letters
8
10
DOI
出版ステータスPublished - 1987 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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