Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch

Tatsuya Toyosaki, Daiki Tanaka, Yuya Shoji, Masashi Kuwahara, Xiaomin Wang, Kenji Kintaka, Hitoshi Kawashima, Yuichiro Ikuma, Hiroyuki Tsuda

    研究成果: Conference contribution

    5 被引用数 (Scopus)

    抄録

    Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-on-insulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.

    本文言語English
    ホスト出版物のタイトルSilicon Photonics VI
    DOI
    出版ステータスPublished - 2011 4月 11
    イベントSilicon Photonics VI - San Francisco, CA, United States
    継続期間: 2011 1月 232011 1月 26

    出版物シリーズ

    名前Proceedings of SPIE - The International Society for Optical Engineering
    7943
    ISSN(印刷版)0277-786X

    Other

    OtherSilicon Photonics VI
    国/地域United States
    CitySan Francisco, CA
    Period11/1/2311/1/26

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • コンピュータ サイエンスの応用
    • 応用数学
    • 電子工学および電気工学

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