Phasespace modelling of a radiofrequency plasma interacting with surfaces

Toshiaki Makabe, Jun Matsui, Nobuhiko Nakano

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.

本文言語English
ページ(範囲)1187-1191
ページ数5
ジャーナルPure and Applied Chemistry
70
6
DOI
出版ステータスPublished - 1998 6

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)

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