We studied phonon-assisted tunneling and the peak-to-valley ratio (P/V ratio) of magnetically confined "dot-like" electron systems in an InGaAs/InAlAs triple barrier resonant tunneling diode. We observe phonon bottleneck, i.e., suppression of the nonresonant valley current and two mode narrow band GaAs- and AlAs-like longitudinal optical (LO)-phonon-assisted tunneling peaks. The P/V ratio increases remarkably with the magnetic confinement and has a maximum each time the energy separation of the confined states matches the GaAs-LO-phonon energy.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||3 SUPPL. B|
|出版ステータス||Published - 1997 3|
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