We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry