Photo-induced structural change in a-SiO2 with undulator radiation

K. Awazu, H. Onuki, H. Imai, H. Hirashima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.

本文言語English
ページ(範囲)69-72
ページ数4
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
80
DOI
出版ステータスPublished - 1996 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 放射線
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 分光学
  • 物理化学および理論化学

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