We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.
|ジャーナル||Journal of Electron Spectroscopy and Related Phenomena|
|出版ステータス||Published - 1996 5|
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