Photolithographically fabricated silicon photonic crystal nanocavity photoreceiver with laterally integrated p-i-n diode

Nurul Ashikin Binti Daud, Takasumi Tanabe

研究成果: Article査読

抄録

We fabricated a SiO2-clad all-silicon high-Q integration of p-i-n diode with photonic crystal nanocavity to demonstrate channel selective photoreceiver operation at a speed of 0.1 Gbs-1 for telecom wavelength light. This SiO2-clad device is photolithographically fabricated with a fabrication method compatible with that used for a complementary metal-oxide semiconductor, and the structure allows future mass production. The dark current is as small as 37.6 pA, which is possible because of the all-silicon structure clad with SiO2. As a result of the low noise, the minimum detectable optical power is -20 dBm, while the footprint of this integrated device is a very small 50 μm2. The characteristics of this device may allow us to use it as a compact monitoring device for optical networks.

本文言語English
論文番号105224
ジャーナルAIP Advances
8
10
DOI
出版ステータスPublished - 2018 10月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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