Photoluminescence and photoconductance in annealed ZnO thin films

R. Ghosh, B. Mallik, Shinobu Fujihara, D. Basak

研究成果: Article

48 引用 (Scopus)

抄録

Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.

元の言語English
ページ(範囲)415-419
ページ数5
ジャーナルChemical Physics Letters
403
発行部数4-6
DOI
出版物ステータスPublished - 2005 2 25

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Photoluminescence
photoluminescence
Thin films
thin films
Nitrogen
Vacuum
ambience
nitrogen
vacuum
Charge carriers
Sol-gels
charge carriers
gels
Annealing
X ray diffraction
optimization
annealing
air
Air
diffraction

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

これを引用

Photoluminescence and photoconductance in annealed ZnO thin films. / Ghosh, R.; Mallik, B.; Fujihara, Shinobu; Basak, D.

:: Chemical Physics Letters, 巻 403, 番号 4-6, 25.02.2005, p. 415-419.

研究成果: Article

Ghosh, R. ; Mallik, B. ; Fujihara, Shinobu ; Basak, D. / Photoluminescence and photoconductance in annealed ZnO thin films. :: Chemical Physics Letters. 2005 ; 巻 403, 番号 4-6. pp. 415-419.
@article{fdb160b54a764cb0aa8c1aa285211252,
title = "Photoluminescence and photoconductance in annealed ZnO thin films",
abstract = "Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.",
author = "R. Ghosh and B. Mallik and Shinobu Fujihara and D. Basak",
year = "2005",
month = "2",
day = "25",
doi = "10.1016/j.cplett.2005.01.043",
language = "English",
volume = "403",
pages = "415--419",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "4-6",

}

TY - JOUR

T1 - Photoluminescence and photoconductance in annealed ZnO thin films

AU - Ghosh, R.

AU - Mallik, B.

AU - Fujihara, Shinobu

AU - Basak, D.

PY - 2005/2/25

Y1 - 2005/2/25

N2 - Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.

AB - Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.

UR - http://www.scopus.com/inward/record.url?scp=13444253869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13444253869&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2005.01.043

DO - 10.1016/j.cplett.2005.01.043

M3 - Article

AN - SCOPUS:13444253869

VL - 403

SP - 415

EP - 419

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 4-6

ER -