Photoluminescence characterization of excitonic centers in ZnO epitaxial films

M. Watanabe, M. Sakai, H. Shibata, H. Tampo, P. Fons, K. Iwata, A. Yamada, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki, K. Nakahara, H. Takasu

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Photoluminescence properties of nominally undoped ZnO thin films grown by radical-source molecular-beam epitaxy have been investigated as a function of (i) sample growth conditions, (ii) excitation laser power density, and (iii) measurement temperatures. Altogether four excitonic emission peaks were observed at photon energy of 3.3646, 3.3606, 3.3572, and 3.3331 eV, which are tentatively denoted as emission peaks A, D, F, and G, respectively. We have classified the defect types responsible for the emission peaks into the following two groups; (i) D and F, whose responsible defect types are suggested to be residual impurities such as aluminum and indium, respectively, and (ii) A and G, whose responsible defect types are suggested to be intrinsic defects such as oxygen vacancies, interstitial zinc, and extended structural defects particularly for G.

本文言語English
論文番号221907
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
22
DOI
出版ステータスPublished - 2005 7月 5
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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