Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

本文言語English
ページ(範囲)2529-2531
ページ数3
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
42
10
DOI
出版ステータスPublished - 2010 9
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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