Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

T. Ishikawa, K. Koga, T. Itahashi, L. S. Vlasenko, K. M. Itoh

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.

本文言語English
ページ(範囲)4552-4554
ページ数3
ジャーナルPhysica B: Condensed Matter
404
23-24
DOI
出版ステータスPublished - 2009 12 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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