Photoluminescence studies of implantation damage centers in30Si

S. Hayama; G. Davies; K. M. Itoh

doi:10.1063/1.1767965

Photoluminescence studies of implantation damage centers in³⁰Si

S. Hayama, G. Davies, K. M. Itoh

物理情報工学科

研究成果: Article › 査読

9 被引用数 (Scopus)

抄録

The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between ^natSi and ³⁰Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in ^natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

本文言語	English
ページ（範囲）	1754-1756
ページ数	3
ジャーナル	Journal of Applied Physics
巻	96
号	3
DOI	https://doi.org/10.1063/1.1767965
出版ステータス	Published - 2004 8月 1

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.1767965

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引用スタイル

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title = "Photoluminescence studies of implantation damage centers in30Si",

abstract = "The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.",

author = "S. Hayama and G. Davies and Itoh, {K. M.}",

note = "Funding Information: We gratefully acknowledge Dr. C. Jeynes of the Surrey Ion Beam Centre, UK for his help with sample implantation. The work was supported by the EPSRC, UK (Grant No. GR∕R10820 and No. GR∕R24531∕01) and, in part, by a Grant-in-Aid for Scientific Research in Priority Areas Semiconductor Nanospintronics (Grant No. 14076215). ",

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AU - Hayama, S.

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AU - Itoh, K. M.

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N2 - The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

AB - The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

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