Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC

Rii Hirano, Yuki Sato, Michio Tajima, Kohei M. Itoh, Koji Maeda

研究成果: Conference contribution

6 引用 (Scopus)

抜粋

We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
ページ395-398
ページ数4
DOI
出版物ステータスPublished - 2012 5 29
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
継続期間: 2011 9 112011 9 16

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷物)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
United States
Cleveland, OH
期間11/9/1111/9/16

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Hirano, R., Sato, Y., Tajima, M., Itoh, K. M., & Maeda, K. (2012). Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. : Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 395-398). (Materials Science Forum; 巻数 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.395