Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

    研究成果: Conference article査読

    28 被引用数 (Scopus)

    抄録

    Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

    本文言語English
    論文番号4419045
    ページ(範囲)711-714
    ページ数4
    ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
    DOI
    出版ステータスPublished - 2007 12 1
    イベント2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
    継続期間: 2007 12 102007 12 12

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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