Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Masumi Saitoh; Shigeki Kobayashi; Ken Uchida

doi:10.1109/IEDM.2007.4419045

Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

研究成果: Conference article › 査読

29 被引用数 (Scopus)

抄録

Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (N_sub) dependence of low-field mobility (μ): μ increase with N_sub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high N_sub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-N_sub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

本文言語	English
論文番号	4419045
ページ（範囲）	711-714
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting, IEDM
DOI	https://doi.org/10.1109/IEDM.2007.4419045
出版ステータス	Published - 2007 12月 1
イベント	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States 継続期間: 2007 12月 10 → 2007 12月 12

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2007.4419045

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引用スタイル

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abstract = "Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.",

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N2 - Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

AB - Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

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