Piezoelectric photoacoustic spectra in CuGaSe2 thin films grown by molecular beam epitaxy

Kenji Yoshino, Daisuke Maruoka, Masakazu Kawahara, Atsuhiko Fukuyama, Kouji Maeda, Paul J. Fons, Shigeru Niki, Akimasa Yamada, Tetsuo Ikari

研究成果: Conference article査読

抄録

The piezoelectric photoacoustic (PPA) spectra for Cu-rich CuGaSe2 (CGS)/GaAs epitaxial layers were successfully observed between liquid nitrogen and room temperatures for the first time. Bandgap energy of CGS (A band) is estimated to be 1.72 eV at liquid nitrogen temperature. The activation energies of three possible intrinsic defect levels are estimated to be about 80, 130 and 190 meV.

本文言語English
ページ(範囲)151-155
ページ数5
ジャーナルMaterials Research Society Symposium - Proceedings
485
出版ステータスPublished - 1998 1 1
外部発表はい
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 21997 12 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Piezoelectric photoacoustic spectra in CuGaSe<sub>2</sub> thin films grown by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル