Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

H. Tampo, H. Shibata, K. Maejima, A. Yamada, K. Matsubara, P. Fons, S. Kashiwaya, S. Niki, Y. Chiba, T. Wakamatsu, H. Kanie

研究成果: Article査読

123 被引用数 (Scopus)

抄録

Both the formation mechanism and the origin of the two-dimensional electron gas (2DEG) in ZnMgO/ZnO heterostructures have been investigated. The 2DEG in the heterostructures was confirmed to originate from polarization-induced charge and was found to be dominant for transport at low temperatures as well as room temperature (RT) by transport measurements. The origin of 2DEG was concluded to be the surface of the ZnMgO layer based on both capacitance-voltage measurements and the dependence of the carrier concentration on the ZnMgO layer thickness. The largest sheet carrier concentration was 1.1× 1013 cm -2 and the highest mobility for the heterostructure was obtained for a Mg composition of 0.61 at RT.

本文言語English
論文番号202104
ジャーナルApplied Physics Letters
93
20
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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