Polarized photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Michio Tajima, Hidekazu Tsuchida, Kohei M. Itoh, Koji Maeda

研究成果: Conference contribution

抄録

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2013
編集者Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
出版社Trans Tech Publications Ltd
ページ319-323
ページ数5
ISBN(印刷版)9783038350101
DOI
出版ステータスPublished - 2014 1 1
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
継続期間: 2013 9 292013 10 4

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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