Polycrystalline CuGaSe2 thin film growth and photovoltaic devices fabricated on alkali-free and alkali-containing substrates

Shogo Ishizuka, Paul J. Fons

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Polycrystalline thin films of ternary CuGaSe2 (CGS), which are one of the potential materials for wide-gap top cells in tandem structure photovoltaic devices, are grown on alkali-free and alkali-containing substrates. The effects of alkali-metals on CGS film morphology, grain size, and photovoltaic device properties are studied. High temperature (>600 °C) growth of CGS films is also investigated with a focus upon variations in alkali-metal distribution profiles in CGS films and the formation of a surface Cu-deficient layer (CDL), which plays an important role in p-n junction formation. The use of a high growth temperature is effective in realizing large grain sizes due to enhanced elemental migration during growth, whereas the formation of a surface CDL is diminished and the alkali-distribution profiles in CGS films are modified resulting in a decrease in carrier density. It is suggested that large CGS grain sizes contribute to obtaining high photocurrent values, but coping with modifications in surface/interface and carrier density with alkali-metals is important to enhance overall photovoltaic performance.

本文言語English
論文番号125407
ジャーナルJournal of Crystal Growth
532
DOI
出版ステータスPublished - 2020 2月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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