Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma

Takashi Yagisawa, Kazunobu Maeshige, Takashi Shimada, Toshiaki Makabe

研究成果: Article

30 引用 (Scopus)

抄録

Two-frequency capacitively coupled plasmas (2f-CCP) are widely used as one of the powerful tools for SiO2 etching. We numerically performed the design of SiO2 etching by using VicAddress. Radial variation of plasma structure and ion distributions having a direct influence on etching were investigated in a 2f-CCP in CF4 (5%)/Ar, which consists both of a power source [very high frequency (VHF) 100 MHz] for high-density plasma production and a bias source (1 MHz) for the acceleration of ion toward the wafer. Degradation of the radial uniformity was observed near the wafer edge due to the distrotion of surface potential mainly caused by the nonuniformity of electron flux at a wafer. Furthermore, we proposed a way of reducing the charge build-up inside the micro trench with the aid of negative charge injection by using a pulsed operation of VHF power source, especially at the low pressure condition.

元の言語English
ページ(範囲)90-100
ページ数11
ジャーナルIEEE Transactions on Plasma Science
32
発行部数1 I
DOI
出版物ステータスPublished - 2004 2

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ion distribution
very high frequencies
etching
wafers
predictions
electron flux
nonuniformity
plasma density
low pressure
injection
degradation
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

これを引用

Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma. / Yagisawa, Takashi; Maeshige, Kazunobu; Shimada, Takashi; Makabe, Toshiaki.

:: IEEE Transactions on Plasma Science, 巻 32, 番号 1 I, 02.2004, p. 90-100.

研究成果: Article

Yagisawa, Takashi ; Maeshige, Kazunobu ; Shimada, Takashi ; Makabe, Toshiaki. / Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma. :: IEEE Transactions on Plasma Science. 2004 ; 巻 32, 番号 1 I. pp. 90-100.
@article{624a6a52579d4204a732710523db1da5,
title = "Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma",
abstract = "Two-frequency capacitively coupled plasmas (2f-CCP) are widely used as one of the powerful tools for SiO2 etching. We numerically performed the design of SiO2 etching by using VicAddress. Radial variation of plasma structure and ion distributions having a direct influence on etching were investigated in a 2f-CCP in CF4 (5{\%})/Ar, which consists both of a power source [very high frequency (VHF) 100 MHz] for high-density plasma production and a bias source (1 MHz) for the acceleration of ion toward the wafer. Degradation of the radial uniformity was observed near the wafer edge due to the distrotion of surface potential mainly caused by the nonuniformity of electron flux at a wafer. Furthermore, we proposed a way of reducing the charge build-up inside the micro trench with the aid of negative charge injection by using a pulsed operation of VHF power source, especially at the low pressure condition.",
keywords = "Ion-angular distribution (IAD), Ion-energy distribution (IED), Negative ion injection, Radial variation, SiO etching, Two-frequency capacitively coupled plasmas (2f-CCP), VicAddress",
author = "Takashi Yagisawa and Kazunobu Maeshige and Takashi Shimada and Toshiaki Makabe",
year = "2004",
month = "2",
doi = "10.1109/TPS.2004.823968",
language = "English",
volume = "32",
pages = "90--100",
journal = "IEEE Transactions on Plasma Science",
issn = "0093-3813",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1 I",

}

TY - JOUR

T1 - Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma

AU - Yagisawa, Takashi

AU - Maeshige, Kazunobu

AU - Shimada, Takashi

AU - Makabe, Toshiaki

PY - 2004/2

Y1 - 2004/2

N2 - Two-frequency capacitively coupled plasmas (2f-CCP) are widely used as one of the powerful tools for SiO2 etching. We numerically performed the design of SiO2 etching by using VicAddress. Radial variation of plasma structure and ion distributions having a direct influence on etching were investigated in a 2f-CCP in CF4 (5%)/Ar, which consists both of a power source [very high frequency (VHF) 100 MHz] for high-density plasma production and a bias source (1 MHz) for the acceleration of ion toward the wafer. Degradation of the radial uniformity was observed near the wafer edge due to the distrotion of surface potential mainly caused by the nonuniformity of electron flux at a wafer. Furthermore, we proposed a way of reducing the charge build-up inside the micro trench with the aid of negative charge injection by using a pulsed operation of VHF power source, especially at the low pressure condition.

AB - Two-frequency capacitively coupled plasmas (2f-CCP) are widely used as one of the powerful tools for SiO2 etching. We numerically performed the design of SiO2 etching by using VicAddress. Radial variation of plasma structure and ion distributions having a direct influence on etching were investigated in a 2f-CCP in CF4 (5%)/Ar, which consists both of a power source [very high frequency (VHF) 100 MHz] for high-density plasma production and a bias source (1 MHz) for the acceleration of ion toward the wafer. Degradation of the radial uniformity was observed near the wafer edge due to the distrotion of surface potential mainly caused by the nonuniformity of electron flux at a wafer. Furthermore, we proposed a way of reducing the charge build-up inside the micro trench with the aid of negative charge injection by using a pulsed operation of VHF power source, especially at the low pressure condition.

KW - Ion-angular distribution (IAD)

KW - Ion-energy distribution (IED)

KW - Negative ion injection

KW - Radial variation

KW - SiO etching

KW - Two-frequency capacitively coupled plasmas (2f-CCP)

KW - VicAddress

UR - http://www.scopus.com/inward/record.url?scp=2442466740&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442466740&partnerID=8YFLogxK

U2 - 10.1109/TPS.2004.823968

DO - 10.1109/TPS.2004.823968

M3 - Article

AN - SCOPUS:2442466740

VL - 32

SP - 90

EP - 100

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

SN - 0093-3813

IS - 1 I

ER -