Prediction of organic low-k material etching in two frequency capacitively coupled plasma

K. Ishihara, T. Shimada, T. Yagisawa, T. Makabe

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Low-k materials are among the promising interlayer dielectric in terms of reducing the circuit transmission time. H2/N2 plasma is currently considered to be appropriate for organic low-k material etching, with both N and H radicals playing important roles on the feature profile of the etching. We have numerically estimated the influence of active species on the feature profile evolution of an organic low-k by changing the H 2/N2 mixture ratio by using a hybrid numerical model (extended-VicAddress), through the predictive image of the two frequency capacitively coupled plasma in H2/N2. We also discuss typical external plasma conditions producing a taper and bowing profiles. The predicted etch rate and feature profile reasonably reproduce the previous experimental results.

本文言語English
ページ(範囲)B99-B104
ジャーナルPlasma Physics and Controlled Fusion
48
12 B
DOI
出版ステータスPublished - 2006 12 1

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Condensed Matter Physics

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