Prediction of plasma charging damage during SiO2 etching by VicAddress

T. Yagisawa, T. Ohmori, T. Shimada, T. Makabe

研究成果: Conference contribution

抄録

We have proposed a prototype of plasma processing CAD, i.e. Vertically Integrated Computer Aided Design for Device processing (VicAddress), that numerically predicts dry etching and related charging damage to a future profile and nanometer scale lower-level elements in ULSI, as well as the low temperature plasma structure. VicAddress has been applied to investigate the dry etching of SiO2 film, that requires ions with several hundred to a thousand of eV. Negative ion injection to a wafer was numerically predicted and designed in a pulsed two-frequency capacitively coupled plasma (2f-CCP) operated by a VHF (100 MHz) - LF (1 MHz) system. In this paper, we predict the velocity distribution incident on a wafer in a pulsed 2f-CCP by using a Monte Carlo method under the plasma structure given by RCT modeling. We discuss: functional separation of very high frequency sustaining and low frequency biasing sources; the negative charge injection mode to the SiO2 wafer during etching; and control of excess-dissociation of CFj by high energy secondary electrons.

本文言語English
ホスト出版物のタイトル2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
出版社Institute of Electrical and Electronics Engineers Inc.
ページ97-99
ページ数3
2003-January
ISBN(電子版)0780377478
DOI
出版ステータスPublished - 2003
イベント2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
継続期間: 2003 4 242003 4 25

Other

Other2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
国/地域France
CityCorbeil-Essonnes
Period03/4/2403/4/25

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学
  • 凝縮系物理学

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